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Wafer Level Burn-In
WLBI3810
Wafer Level Burn-In Test System
WLBI3810 Wafer Level Burn-In System is a high-end burn-in test equipment specifically designed for Silicon Carbide (SiC) and Gallium Nitride (GaN) wafers, featuring efficient and precise testing capabilities. This system can simultaneously perform High-Temperature Gate Bias (HTGB) and High-Temperature Reverse Bias (HTRB) burn-in tests on 9 wafers, with a testing time range from several minutes to thousands of hours, flexibly adapting to the burn-in requirements of different products. This equipment features a fully automated loading and unloading system, incorporates a three-cassette design, supports seamless test mode switching, and automatically adjusts burn-in conditions, ensuring both efficiency and continuity throughout the testing process.
The system is capable of high-precision detection of the threshold voltage (Vth) for each die, ensuring the accuracy of test data. Each test channel is equipped with an independent over-current protection function, effectively safeguarding the safety of the devices under test. Additionally, the system can generate detailed map data, providing users with comprehensive performance analysis and quality control references. The WLBI3810 system provides reliable solutions for diverse testing needs, from stable burn-in tests in large-scale batch production to flexible configuration in R&D.
Highlights
  • Automated loading and unloading
    Fully automated wafer handling minimizes manual intervention, boosting efficiency and accuracy
  • Precise probing
    Delivers ±25 μm probe mark repositioning accuracy for reliable testing
  • Comprehensive system features
    Supports map data binding for traceability and testing up to 2560 dies simultaneously
  • Multimode burn-in
    Automatically switches between HTGB and HTRB modes
  • Leakage current monitoring
    Igss and Idss leakage current monitoring
  • Integrated testing functions
    Includes Vth parameter testing for in-depth analysis
  • Exceptional measurement accuracy
    Offers maximum resolution of 0.1 nA
    Maximum leakage current accuracy 0.5 nA
  • Precise temperature control
    Ensures uniformity within ±2℃@ TR~175℃, accuracy within 1℃, and resolution of 0.1℃
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